- PVA TePla Taiwan
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- Overview Crystal Growing Systems
- Vertical Gradient Freeze
VGF Systems
Kronos
The Kronos systems employ the Vertical Gradient Freeze (VGF) method. The high operating pressure in the system means that even materials whose components have a high vapor pressure can be crystallized. The system is available in a pressure range of 10–40 bar for the crystallization of different compound semiconductors. This method allows the industrial production of crystals such as Gallium Arsenide (GaAs) in the standard version with a maximum pressure of 10 bar and Indium Phosphide (InP) in a version with a maximum pressure of 40 bar. We also offer a mobile system for charging and emptying the system.
Product Data Overview
Material: Gallium Arsenide, Indium Phosphide
Crucible diameter: | 4–6" |
Crucible height: | up to 450 mm |
Chamber diameter: | 800 mm |
Chamber height: | 975 mm |
Operating pressure: | max. 40 bar |
Dimensions | |
Height: | 2,900 mm |
Width: | 1,650 mm |
Depth: | 1,350 mm |
Weight (total): | 3,500 kg |