The Kronos systems employ the Vertical Gradient Freeze (VGF) method. The high operating pressure in the system means that even materials whose components have a high vapor pressure can be crystallized. The system is available in a pressure range of 10–40 bar for the crystallization of different compound semiconductors. This method allows the industrial production of crystals such as Gallium Arsenide (GaAs) in the standard version with a maximum pressure of 10 bar and Indium Phosphide (InP) in a version with a maximum pressure of 40 bar. We also offer a mobile system for charging and emptying the system.
Material: Gallium Arsenide, Indium Phosphide
|Crucible height:||up to 450 mm|
|Chamber diameter:||800 mm|
|Chamber height:||975 mm|
|Operating pressure:||max. 40 bar|
|Weight (total):||3,500 kg|