Removal of photoresist (also known as “stripping” or “ashing”) is a widely used process in the manufacture of semiconductor components, MEMS or optoelectronic components. A plasma process under microwave excitation is mostly used here. This process enables a high removal rate along with minimal damage to sensitive C-MOS components. It is used for full ashing of the photoresist and for partial removal (descum or flash process) as pretreatment for subsequent process steps.
Depending on the properties of the components and the requirements for a cost-effective procedure, the process is performed with batch sizes of 50 wafers, with a 200 mm diameter in 25 wafers per run. The advantages of the batch process are an unbeatable cost benefit as well as the property of being able to remove the paint from both sides of the wafer simultaneously. In addition, our systems are able to perform the process in a temperature-controlled manner without exceeding a preset maximum temperature.
To the batch wafer systems
For challenging applications, we manufacture systems with a single-layer process up to a wafer size of 300 mm. More precise control of the process is possible here, providing optimum results for removal rate, uniformity, and endpoint detection.
Most processes are based on an oxygen process, while some use special additive gases, depending on the requirements of the materials to be processed. In the case of sensitive layers with a tendency to oxidation, a hydrogen process is alternatively available in order to prevent oxidation of exposed layers.
To the single-wafer systems